SI4490DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si4490DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 160 V, V_GS = 0 V
V_DS = 160 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 4.0 A
V_GS = 6.0 V, I_D = 4.0 A
V_DS = 15 V, I_D = 5 A
I_S = 2.8 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 100 V, V_GS = 10 V, I_D = 4.0 A
V_DD = 100 V, R_L = 25 W
I_D ^ 4.0 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.8 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0
V
"100
nA
1
mA
5
40
A
0.065
0.080
W
0.070
0.090
19
S
0.75
1.2
V
34
42
7.5
nC
12.0
0.2
0.85
1.3
W
14
20
20
30
32
50
ns
25
35
70
100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
32
24
16
8
0
0
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2
Output Characteristics
V_GS = 10 thru 6 V
5V
4V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
40
35
30
25
20
15
10
5
0
0
T_C = 125_C
25_C
- 55_
C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Document Number: 71341
S-03951—Rev. B, 26-May-03