SI4463CDY Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 2.5 V (G-S) MOSFET

SPICE Device Model Si4463CDY
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (T_J = 25 °C, unless otherwise noted)
60
10
V_GS = 10 V, 6 V, 5 V, 4 V, 3 V
48
T_J = 125 °C
8
36
24
V_GS = 2 V
12
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
6
T_J = - 55 °C
4
2
T_J = 25 °C
0
0.0
0.6
1.2
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
0.020
0.016
0.012
0.008
V_GS = 4.5 V
0.004
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
7000
5600
C_iss
4200
2800
1400
C_rss
C_oss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
10
I_D = 10 A
8
6
V_DS = 10 V
V_DS = 15 V
100
T_J = 150 °C
10
T_J = 25 °C
1
4
0.1
2
0.01
0
0
23
46
69
92
115
Q_g - Total Gate Charge (nC)
Note
Dots and squares represent measured data.
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 67600
S11-0402-Rev. A, 14-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000