SI4463CDY Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 2.5 V (G-S) MOSFET

SPICE Device Model Si4463CDY
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
SIMULATED MEASURED
DATA
DATA
Static
Gate-Source Threshold Voltage
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage
Dynamic^b
V_GS(th)
R_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 μA
V_GS = - 10 V, I_D = - 13 A
V_GS = - 4.5 V, I_D = - 12 A
V_DS = - 10 V, I_D = - 13 A
I_S = - 3 A
0.82
0.0060
0.0075
52
- 0.70
-
0.0060
0.0073
60
- 0.70
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
V_DS = - 10 V, V_GS = 0 V, f = 1 MHz
V_DS = - 10 V, V_GS = - 10 V, I_D = - 10 A
4210
854
828
98
54
4250
840
830
108
54
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = - 15 V, V_GS = - 4.5 V, I_D = - 10 A
7.8
Q_gd
18.5
7.8
18.5
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
UNIT
V

S
V
pF
nC
www.vishay.com
2
Document Number: 67600
S11-0402-Rev. A, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000