SI4463CDY Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 2.5 V (G-S) MOSFET

SPICE Device Model Si4463CDY
Vishay Siliconix
P-Channel 2.5 V (G-S) MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to 10 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge characteristics while avoiding convergence
difficulties of the switched C_gd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
D
C_GD
M₂
R₁
Gy
Gx
3
DBD
G
+–
R_G
ETCV
C_GS
M₁
S
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 67600
S11-0402-Rev. A, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000