SI4431DY-T1 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4431DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
Output Characteristics
30
V_GS = 10, 9, 8, 7, 6, 5 V
24
Transfer Characteristics
30
T_C = –55_C
25_C
24
125_C
18
18
4V
12
12
6
0
0
0.20
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
0
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
2000
Capacitance
0.16
0.12
1600
C_iss
1200
0.08
0.04
V_GS = 4.5 V
V_GS = 10 V
800
C_oss
400
C_rss
0.00
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 5.3 A
6
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
1.6
I_D = 5.3 A
1.2
4
0.8
2
0.4
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
Document Number: 70151
S-51455—Rev. D, 01-Aug-05
0.0
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
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