SI4431DY-T1 Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si4431DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –30 V, V_GS = 0 V
V_DS = –30 V, V_GS = 0 V, T_J = 70_C
V_DS v –5 V, V_GS = –10 V
V_DS v –5 V, V_GS = –4.5 V
V_GS = –10 V, I_D = –5.3 A
V_GS = –4.5 V, I_D = –2.0 A
V_DS = –15 V, I_D = –5.3 A
I_S = –2.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
V_DS = –15 V, V_GS = –10 V, I_D = –5.3 A
V_DD = –15 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –2.3 A, di/dt = 100 A/ms
Min Typ^A Max Unit
–1.0
V
"100
nA
–1
mA
–25
–30
A
–7
0.029
0.040
W
0.047
0.070
9.3
S
–0.78
–1.2
V
22
35
3.95
nC
3.5
4.5
6.1
W
11.5
20
12
20
38
55
ns
15
25
50
80
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2
Document Number: 70151
S-51455—Rev. D, 01-Aug-05