SI4431DY-T1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
Si4431DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.040 @ V_GS = –10 V
–30
0.070 @ V_GS = –4.5 V
I_D (A)
"5.8
"4.5
FEATURES
D TrenchFETr Power MOSFET
D 100% UIS Tested
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4431DY-T1
Si4431DY-T1—E3 (Lead (Pb)-Free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
–30
"20
"5.8
"4.6
"30
–2.3
20
20
2.5
1.6
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
R_thJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.siliconix.com/www/product/spice.htm
Document Number: 70151
S-51455—Rev. D, 01-Aug-05
Limit
50
Unit
V
A
mJ
W
_C
Unit
_C/W
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