SI4426DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
Si4426DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
4000
Capacitance
0.08
0.06
3200
C_iss
2400
0.04
0.02
0
0
V_GS = 2.5 V
V_GS = 4.5 V
10
20
30
40
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
I_D = 8.5 A
4
3
2
1
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
1600
C_oss
800
C_rss
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 4.5 V
1.3
I_D = 8.5 A
1.2
1.1
1.0
0.9
0.8
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
T_J = 25_C
0.08
0.06
I_D = 8.5 A
0.04
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD – Source-to-Drain Voltage (V)
Document Number: 71107
S-01041—Rev. B, 15-May-00
0.02
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
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