SI4426DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si4426DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 8.5 A
V_GS = 2.5 V, I_D = 7.1 A
V_DS = 10 V, I_D = 8.5 A
I_S = 2.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 10 V, V_GS = 4.5 V, I_D = 8.5 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.1 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
0.6
V
"100
nA
1
mA
5
40
A
0.019
0.025
W
0.025
0.035
27
S
0.8
1.2
V
25
50
6.5
nC
4
40
60
40
60
90
150
ns
40
60
40
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V_GS = 5 thru 3 V
2.5 V
30
20
2V
10
1, 1.5 V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS – Drain-to-Source Voltage (V)
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2-2
Transfer Characteristics
40
30
20
T_C = 125_C
10
25_C
–55_C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 71107
S-01041—Rev. B, 15-May-00