SI4426DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si4426DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.025 @ V_GS = 4.5 V
0.035 @ V_GS = 2.5 V
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
I_D (A)
"8.5
"7.1
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
"8.5
"6.8
2.1
2.5
1.6
20
"12
"40
–55 to 150
"6.5
"5.2
2.1
1.5
0.9
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71107
S-01041—Rev. B, 15-May-00
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
38
70
20
Maximum
50
85
25
Unit
_C/W
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2-1