IRF9Z14S Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
t_rr
-
T_J = 25 °C, I_F = - 6.7 A, dI/dt = 100 A/µs^{b, c}
80
160
ns
Q_rr
-
96
190 nC
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF9Z14/SiHF9Z14 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
Fig. 4 - Normalized On-Resistance vs. Temperature
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