IRF9Z14S Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 60
V_GS = - 10 V
12
3.8
5.1
Single
0.50
FEATURES
• Advanced Process Technology
• Surface Mount (IRF9Z14S/SiHF9Z14S)
Available
• Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L) _RoHS*
• 175 °C Operating Temperature
COMPLIANT
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
I²PAK (TO-262) D²PAK (TO-263)
S
G
D
S
G
D
P-Channel MOSFET
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D²PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D²PAK is suitable
for high current applications because of is low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application.
The through-hole version (IRF9Z14L/SiHF9Z14L) is
available for low-profile applications.
ORDERING INFORMATION
Package
D²PAK (TO-263)
Lead (Pb)-free
IRF9Z14SPbF
SiHF9Z14S-E3
SnPb
IRF9Z14S
SiHF9Z14S
Note
a. See device orientation.
D²PAK (TO-263)
IRF9Z14STRLPbF^a
SiHF9Z14STL-E3^a
IRF9Z14STRL^a
SiHF9Z14STL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^e
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
Pulsed Drain Current^{a, e}
I_DM
Linear Derating Factor
Single Pulse Avalanche Energy^{b, e}
E_AS
Avalanche Current^a
I_AR
Repetiitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
* Pb containing terminations are not RoHS compliant, exemptions may apply
I²PAK (TO-262)
IRF9Z14LPbF
SiHF9Z14L-E3
-
-
LIMIT
- 60
± 20
- 6.7
- 4.7
- 27
0.29
140
- 6.7
4.3
3.7
43
UNIT
V
A
W/°C
mJ
A
mJ
W
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
WORK-IN-PROGRESS
www.vishay.com
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