IRF9Z14S Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Peak Diode Recovery dV/dt^{c, e}
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 25 V, starting T_J = 25 °C, L = 3.6 mH, R_G = 25 Ω, I_AS = - 6.7 A (see fig. 12).
c. I_SD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z14/SiHF9Z14 data and test conditions.
LIMIT
- 4.5
- 55 to + 175
300^d
UNIT
V/ns
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)^a
R_thJA
Maximum Junction-to-Case (Drain)
R_thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
3.5
UNIT
°C/W
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
V_DS
ΔV_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
V_GS = 0 V, I_D = - 250 µA
Reference to 25 °C, I_D = - 1 mA^c
V_DS = V_GS, I_D = - 250 µA
V_GS = ± 20 V
V_DS = - 60 V, V_GS = 0 V
V_DS = - 48 V, V_GS = 0 V, T_J = 150 °C
V_GS = - 10 V
I_D = - 4.0 A^b
V_DS = - 25 V, I_D = - 4.0 A^c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
V_GS = 0 V,
V_DS = - 25 V,
f = 1.0 MHz, see fig. 5^c
V_GS = - 10 V
I_D = - 6.7 A, V_DS = - 48 V,
see fig. 6 and 13^{b, c}
V_DD = - 30 V, I_D = - 6.7 A,
R_G = 24 Ω, R_D = 4.0 Ω, see fig. 10^b
Between lead, and center of die contact
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current^a
integral reverse
I_SM
p - n junction diode
D
G
S
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = - 6.7 A, V_GS = 0 V^b
MIN.
- 60
-
- 2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
- 0.06
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.5
-
V
V/°C
V
nA
µA
Ω
S
270
-
170
-
pF
31
-
-
12
-
3.8
nC
-
5.1
11
-
63
-
ns
10
-
31
-
7.5
-
nH
-
- 6.7
A
-
- 27
-
- 5.5
V
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Document Number: 91089
S-Pending-Rev. A, 02-Jun-08