IL410_12 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Optocoupler, Phototriac Output, Zero Crossing

IL410, IL4108
Optocoupler, Phototriac Output, Zero Crossing, _{Vishay Semiconductors}
High dV/dt, Low Input Current
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage
Reverse current
Input capacitance
Thermal resistance, junction to ambient
OUTPUT
I_F = 10 mA
V_R = 6 V
V_F = 0 V, f = 1 MHz
V_F
I_R
C_IN
R_thja
1.16 1.35
V
0.1
10
μA
25
pF
750
°C/W
Off-state current
On-state voltage
V_D = V_DRM, T_amb = 100 °C,
I_F = 0 mA
I_T = 300 mA
I_DRM
V_TM
10
100
μA
1.7
3
V
Surge (non-repetitive), on-state current
Trigger current 1
Trigger current 2
Trigger current temp. gradient
Inhibit voltage temp. gradient
Off-state current in inhibit state
f = 50 Hz
V_D = 5 V
V_D = 220 V_RMS, f = 50 Hz,
T_j = 100 °C, t_pIF > 10 ms
I_F = I_FT1, V_D = V_DRM
I_TSM
I_FT1
I_FT2
I_FT1/T_j
I_FT2/T_j
V_DINH/T_j
I_DINH
3
A
2
mA
6
mA
7
14 μA/°C
7
14 μA/°C
- 20
mV/°C
50
200
μA
Holding current
Latching current
Zero cross inhibit voltage
V_T = 2.2 V
I_F = rated I_FT
I_H
65
500
μA
I_L
500
μA
V_IH
15
25
V
Critical rate of rise of off-state voltage
Critical rate of rise of voltage at current
commutation
Critical rate of rise of on-state current
commutation
Thermal resistance, junction to ambient
V_D = 0.67 V_DRM, T_j = 25 °C
V_D = 0.67 V_DRM, T_j = 80 °C
V_D = 230 V_RMS,
I_D = 300 mA_RMS, T_J = 25 °C
V_D = 230 V_RMS,
I_D = 300 mA_RMS, T_J = 85 °C
V_D = 230 V_RMS,
I_D = 300 mA_RMS, T_J = 25 °C
dV/dt_cr
dV/dt_cr
10 000
5000
dV/dt_crq
8
dV/dt_crq
7
dI/dt_crq
12
R_thja
150
V/μs
V/μs
V/μs
V/μs
A/ms
°C/W
COUPLER
Critical rate of rise of coupled
input/output voltage
I_T = 0 A, V_RM = V_DM = V_DRM
dV_IO/dt 10 000
V/μs
Common mode coupling capacitance
C_CM
0.01
pF
Capacitance (input to output)
Isolation resistance
f = 1 MHz, V_IO = 0 V
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
C_IO
0.8
pF
R_IO
 10¹²

R_IO
 10¹¹

Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
SWITCHING CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL
Turn-on time
V_RM = V_DM = V_DRM
t_on
MIN.
TYP.
35
MAX.
UNIT
μs
Document Number: 83627
Rev. 2.0, 29-Mar-11
For technical questions, contact: [e-mail]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000