DG417_10 Datasheet, PDF (3/16 Pages) Vishay Siliconix – Precision CMOS Analog Switches

SCHEMATIC DIAGRAM Typical Channel
V+
V_L
V_IN
GND
V-
Level
Shift/
Drive
Figure 1.
DG417, DG418, DG419
Vishay Siliconix
S
V-
V+
D
SPECIFICATIONS^a
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source
On-Resistance
Switch Off Leakage
Current
Symbol
V_ANALOG
R_DS(on)
I_S(off)
I_D(off)
Channel Off Leakage
Current
I_D(on)
Digital Control
Input Current V_IN Low
I_IL
Input Current V_IN High
I_IH
Dynamic Characteristics
Turn-On Time
t_ON
Turn-Off Time
t_OFF
Transition Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
t_TRANS
t_D
Q
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^f
Temp.^b
I_S = - 10 mA, V_D = ± 12.5 V
V+ = 13.5 V, V- = - 13.5 V
V+ = 16.5, V- = - 16.5 V
V_D = ± 15.5 V
V_S = ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
V_S = V_D = ± 15.5 V
DG417
DG418
DG419
DG417
DG418
DG419
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Full
Full
R_L = 300 , C_L = 35 pF
V_S = ± 10 V
See Switching Time
Test Circuit
DG417
DG418
DG417
DG418
R_L = 300 , C_L = 35 pF
V_S1 = ± 10 V, V_S2 = ± 10 V
DG419
R_L = 300 , C_L = 35 pF
V_S1 = V_S2 = ± 10 V
DG419
C_L = 10 nF, V_gen = 0 V, R_gen = 0 
Room
Full
Room
Full
Room
Full
Room
Room
Typ.^c
20
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
0.005
0.005
100
60
13
60
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.^d Max.^d Min.^d Max.^d Unit
- 15
15
- 15
15
V
35
45
35
45

- 0.25 0.25 - 0.25 0.25
- 20
20
-5
5
- 0.25 0.25 - 0.25 0.25
- 20
20
-5
5
- 0.75
- 60
0.75
60
- 0.75
- 12
0.75
12
nA
- 0.4 0.4 - 0.4 0.4
- 40
40
- 10
10
- 0.75 0.75 - 0.75 0.75
- 60
60
- 12
12
- 0.5 0.5 - 0.5 0.5
µA
- 0.5 0.5 - 0.5 0.5
175
175
250
250
145
145
210
210
175
175 ^ns
250
250
5
5
pC
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
www.vishay.com
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