DG417_10 Datasheet, PDF (10/16 Pages) Vishay Siliconix – Precision CMOS Analog Switches

DG417, DG418, DG419
Vishay Siliconix
APPLICATIONS
Micropower UPS Transfer Switch
When V_CC drops to 3.3 V, the DG417 changes states,
closing SW₁ and connecting the backup cell, as shown in
Figure 10. D₁ prevents current from leaking back towards the
rest of the circuit. Current consumption by the CMOS analog
switch is around 100 pA; this ensures that most of the power
available is applied to the memory, where it is really needed.
In the stand-by mode, hundreds of A are sufficient to retain
memory data.
When the 5 V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
change of state in the analog switch, restoring normal
operation.
Programmable Gain Amplifier
The DG419, as shown in figure 11, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by R_DS(on) variation as a function
of analog signal amplitude.
GaAs FET Driver
The DG419, as shown in figure 12 may be used as a GaAs
FET driver. It translates a TTL control signal into - 8 V, 0 V
level outputs to drive the gate.
V_CC
(5 V)
D₁
R₁
V_SENSE
453 k
Memory
R₂
383 k
V+ _SW1 VL
D
S
DG417
IN
GND
V-
+
3 V Li Cell
–
Figure 11. Micropower UPS Circuit
DG419
S₁
R₁
S₂
R₂
IN
D
V_IN
-
+
5V
V_OUT
Figure 12. Programmable Gain Amplifier
+5V
V_L
S₁
S₂
V+
GaAs FET
D ^VOUT
GND
DG419
V-
-8V
Figure 13. GaAs FET Driver
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70051.
www.vishay.com
10
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10