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| BYG10M-E3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Standard Avalanche SMD Rectifier | |||
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www.vishay.com
BYG10x-E3/HE3
Vishay General Semiconductor
1000
VR = VRRM
100
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
400
350
VR = VRRM
300
PR - Limit at 100 % VR
250
200
150
100
PR - Limit at 80 % VR
50
0
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
5000
4000
TA = 100 °C
TA = 125 °C
3000
2000
TA = 75 °C
TA = 50 °C
TA = 25 °C
1000
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 6 - Reverse Recovery Time vs. Forward Current
2000
1600
1200
800
TA = 100 °C
TA = 125 °C
TA = 75 °C
TA = 50 °C
TA = 25 °C
400
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Reverse Recovery Charge vs. Forward Current
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Revision: 20-May-14
3
Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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