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BYG10M-E3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Standard Avalanche SMD Rectifier
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BYG10x-E3/HE3
Vishay General Semiconductor
Standard Avalanche SMD Rectifier
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
1.5 A
200 V, 400 V, 600 V, 800 V,
1000 V, 1600 V
IFSM
IR
VF
ER
TJ max.
Package
30 A
1.0 μA
1.15 V
20 mJ
150 °C
DO-214AC (SMA)
Diode variations
Single die
FEATURES
• Low profile package
• Ideal for automated placement
• Controlled avalanche characteristics
• Glass passivated junction
• Low reverse current
• High surge current capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002
and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• BYG10Y for commercial grade only
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYG10D BYG10G
Device marking code
BYG10D BYG10G
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
VRRM
200
400
IF(AV)
IFSM
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C (for BYG10D thru BYG10M)
I(BR)R = 0.4 A, TJ = 25 °C (for BYG10Y)
Operating junction and storage temperature range
ER
TJ, TSTG
BYG10J BYG10K
BYG10J BYG10K
600
800
1.5
30
20
- 55 to + 150
BYG10M
BYG10M
1000
BYG10Y
BYG10Y
1600
UNIT
V
A
A
mJ
°C
Revision: 20-May-14
1
Document Number: 88957
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000