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BYG10M-E3 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Standard Avalanche SMD Rectifier
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BYG10x-E3/HE3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL BYG10D BYG10G BYG10J BYG10K
Maximum
IF = 1 A
instantaneous
forward voltage (1) IF = 1.5 A
TJ = 25 °C
VF
1.1
1.15
Maximum DC
reverse current
VR = VRRM
TJ = 25 °C
TJ = 100 °C
IR
1
10
Maximum reverse IF = 0.5 A, IR = 1.0 A,
recovery time
Irr = 0.25 A
trr
4
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
BYG10M
BYG10Y
UNIT
V
μA
μs
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYG10D BYG10G BYG10J BYG10K
Typical thermal resistance, junction to lead
RJL
25
RJA (1)
150
Typical thermal resistance, junction to ambient
RJA (2)
125
RJA (3)
100
Notes
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 μm Cu
BYG10M
BYG10Y
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BYG10D-E3/TR
0.064
TR
BYG10D-E3/TR3
0.064
TR3
BYG10DHE3/TR (1)
0.064
TR
BYG10DHE3/TR3 (1)
0.064
TR3
Note
(1) AEC-Q101 qualified
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
1.6
1.4
VR = VRRM
Half Sine-Wave
1.2
RθJA ≤ 25 K/W
1.0
0.8
0.6
0.4
0.2
0
0
RθJA ≤ 125 K/W
RθJA ≤ 150 K/W
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Revision: 20-May-14
2
Document Number: 88957
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