BPW96B Datasheet, PDF (3/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW96B, BPW96C
Silicon NPN Phototransistor, RoHS Compliant _{Vishay Semiconductors}
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
10⁴
10³
V = 20 V
CE
10²
10¹
10
20
40
60
80
100
94 8304
T - Ambient Temperature (°C)
amb
Fig. 2 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
V =5V
CE
1.6
E = 1 mW/cm²
e
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
20
40
60
80
100
94 8239
T_amb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
10
BPW96C
BPW96B
1
0.1
0.01
0.01
94 8296
V_CE = 5 V
λ = 950 nm
0.1
1
10
E_e - Irradiance (mW/cm²)
Fig. 4 - Collector Light Current vs. Irradiance
10
BPW96B
E_e = 1 mW/cm²
0.5 mW/cm²
0.2 mW/cm²
1
0.1 mW/cm²
0.05 mW/cm²
0.1
0.1
1
λ = 950 nm
10
100
94 8297
V_CE - Collector Emitter Voltage (V)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
10
8
f = 1 MHz
6
4
2
0
0.1
1
10
100
94 8301
V_CE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
8
V_CE = 5 V
6
R_L = 100 Ω
λ = 950 nm
4
t_off
2
t_on
0
0 2 4 6 8 10 12 14
94 8293
I_C - Collector Current (mA)
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Document Number: 81532
Rev. 1.7, 05-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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