BPW96B Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW96B, BPW96C
Vishay Semiconductors ^{Silicon NPN Phototransistor, RoHS Compliant}
200
160
120
80
R_thJA
40
0
0
94 8300
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Angle of half sensitivity
I_C = 1 mA
V_CE = 20 V, E = 0
V_CE = 5 V, f = 1 MHz, E = 0
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
E_e = 1 mW/cm², λ = 950 nm,
I_C = 0.1 mA
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
V_S = 5 V, I_C = 5 mA, R_L = 100 Ω
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_(BR)CEO
I_CEO
C_CEO
ϕ
λ_p
λ_0.1
V_CEsat
t_on
t_off
f_c
MIN.
70
TYP.
1
3
± 20
850
450 to 1080
2.0
2.3
180
MAX.
200
0.3
UNIT
V
nA
pF
deg
nm
nm
V
µs
µs
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
Collector light current
E_e = 1 mW/cm², λ = 950 nm,
V_CE = 5 V
PART
BPW96B
BPW96C
SYMBOL
I_ca
I_ca
MIN.
2.5
4.5
TYP.
4.5
8
MAX.
7.5
15
UNIT
mA
mA
www.vishay.com
420
For technical questions, contact: [e-mail]
Document Number: 81532
Rev. 1.7, 05-Sep-08