BPW96B Datasheet, PDF (1/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPW96B, BPW96C
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
94 8391
DESCRIPTION
BPW96 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1¾ plastic package. It is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 20°
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW96B
I_ca (mA)
2.5 to 7.5
BPW96C
4.5 to 15
Note
Test condition see table “Basic Characteristics”
ϕ (deg)
± 20
± 20
λ_0.1 (nm)
450 to 1080
450 to 1080
ORDERING INFORMATION
ORDERING CODE
BPW96B
BPW96C
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector emitter voltage
TEST CONDITION
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
t_p/T ≤ 0.5, t_p ≤ 10 ms
T_amb ≤ 47 °C
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t≤3s
Connected with Cu wire, 0.14 mm²
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_CEO
V_ECO
I_C
I_CM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
PACKAGE FORM
T-1¾
T-1¾
VALUE
70
5
50
100
150
100
- 40 to + 100
- 40 to + 100
260
350
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
Document Number: 81532
Rev. 1.7, 05-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
419