72231 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si6911DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
2500
Capacitance
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
0.00
0
V_GS = 4.5 V
6
12
18
24
30
I_D - Drain Current (A)
6
V_DS = 6 V
5
I_D = 5.1 A
Gate Charge
4
3
2
1
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
1
T_J = 25_C
2000
C_iss
1500
1000
C_oss
500
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 5.1 A
1.4
1.2
1.0
0.8
0.6
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 5.1 A
0.04
0.02
0.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD - Source-to-Drain Voltage (V)
Document Number: 72231
S-31064—Rev. A, 26-May-03
0.00
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3