72231 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Si6911DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 300 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 9.6 V, V_GS = 0 V
V_DS = -9.6 V, V_GS = 0 V, T_J = 70_C
V_DS = -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -5.1 A
V_GS = -2.5 V, I_D = -4.5 A
V_GS = -1.8 V, I_D = -3.9 A
V_DS = -5 V, I_D = -5.1 A
I_S = -1.0 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = -6 V, V_GS = -4.5 V, I_D = -5.1 A
V_DD = -6 V, R_L = 6 W
I_D ^ -1 A, V_GEN = -4.5 V, R_G = 6 W
I_F = -1.0 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.4
- 0.9
V
"100
nA
-1
mA
- 25
- 20
A
0.021
0.026
W
0.028
0.035
0.037
0.046
W
20
S
- 0.65
- 1.1
V
16
24
1.9
nC
3.9
35
55
62
100
120
180
ns
70
110
65
100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 5 thru 2.5 V
24
2V
18
Transfer Characteristics
30
T_C = -55_C
24
25_C
125_C
18
12
12
6
1.5 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
2
6
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72231
S-31064—Rev. A, 26-May-03