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72231 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET
New Product
Si6911DQ
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.026 @ VGS = -4.5 V
- 12
0.035 @ VGS = -2.5 V
0.046 @ VGS = -1.8 V
ID (A)
- 5.1
- 4.5
- 3.9
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D Battery Switch
S1
S2
TSSOP-8
D1 1 D
S1 2
S1 3
G1 4
Top View
8 D2
7 S2
6 S2
5 G2
Ordering Information: Si6911DQ T-1
G1
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 12
"8
- 5.1
- 4.3
- 4.1
- 3.5
- 30
- 1.0
- 0.7
1.14
0.83
0.73
0.53
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72231
S-31064—Rev. A, 26-May-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
86
124
59
Maximum
110
150
75
Unit
_C/W
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