20ETS16PBF Datasheet, PDF (3/6 Pages) Vishay Siliconix – Input Rectifier Diode, 20 A

Input Rectifier Diode, 20 A
VS-20ETS16PbF
Vishay Semiconductors
30
180°
120°
25
90°
60°
30°
20
15
RMS limit
10
Ø
Conduction angle
5
T_J = 150 °C
0
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
35
DC
180°
30
120°
90°
25
60°
30°
20
15
RMS limit
10
5
0
0
Ø
Conduction period
T_J = 150 °C
5
10
15
20
25
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
1000
100
T_J = 25 °C
300
At any rated load condition and with
rated V_RRM applied following surge.
250
Initial T_J = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
50
1
10
100
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
300
Maximum non-repetitive surge current
versus pulse train duration.
250
Initial T_J = 150 °C
No voltage reapplied
Rated V_RRM reapplied
200
150
100
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
T_J = 150 °C
10
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Document Number: 93405 For technical questions within your region, please contact one of the following:
Revision: 02-Nov-10
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