20ETS16PBF Datasheet, PDF (2/6 Pages) Vishay Siliconix – Input Rectifier Diode, 20 A

VS-20ETS16PbF
Vishay Semiconductors
Input Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM
Forward slope resistance
r_t
Threshold voltage
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
R_thJC
DC operation
Typical thermal resistance,
case to heatsink
R_thCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-220AC
VALUES
- 40 to 150
UNITS
°C
1.3
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20ETS16
150
R_thJC (DC) = 1.3 °C/W
140
130
Ø
Conduction angle
120
110
100
30° ^{60° 90° 120°}
180°
90
0 2 4 6 8 10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
R_thJC (DC) = 1.3 °C/W
140
130
Ø
Conduction period
120
110
100
90
0
30°
60°
90°
120°
180°
DC
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 93405
[e-mail], [e-mail], [e-mail]
Revision: 02-Nov-10