20ETS16PBF Datasheet, PDF (1/6 Pages) Vishay Siliconix – Input Rectifier Diode, 20 A

VS-20ETS16PbF
Vishay Semiconductors
Input Rectifier Diode, 20 A
Base
cathode
2
TO-220AC
PRODUCT SUMMARY
V_F at 10 A
I_FSM
V_RRM
1
3
Cathode Anode
1V
300 A
1600 V
FEATURES
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
RoHS
COMPLIANT
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
The VS-20ETS16PbF rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The glass
passivation technology used has reliable operation up to
150 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C
16.3
common heatsink of 1 °C/W
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
Sinusoidal waveform
10 A, T_J = 25 °C
VALUES
20
1600
300
1.0
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETS16PbF
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
1600
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
I_RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
I²ïƒ–t
TEST CONDITIONS
T_C = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
UNITS
A
A²s
A²ïƒ–s
Document Number: 93405 For technical questions within your region, please contact one of the following:
Revision: 02-Nov-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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