20ETS08PBF Datasheet, PDF (3/9 Pages) Vishay Siliconix – High Voltage Input Rectifier Diode, 20 A

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150
R_thJC (DC) = 1.3 °C/W
140
130
Ø
Conduction angle
120
110
100
30° ^{60° 90° 120°}
180°
90
0 2 4 6 8 10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
150
R_thJC (DC) = 1.3 °C/W
140
130
Ø
Conduction period
120
110
100
90
0
30°
60°
90°
120°
180°
DC
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
VS-20ETS..PbF, VS-20ATS..PbF
Vishay Semiconductors
35
DC
180°
30
120°
90°
25
60°
30°
20
15
RMS limit
10
5
0
0
Ø
Conduction period
T_J = 150 °C
5
10
15
20
25
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
300
At any rated load condition and with
rated V_RRM applied following surge.
250
Initial T_J = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
50
1
10
100
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
30
180°
120°
25
90°
60°
30°
20
15
RMS limit
10
Ø
Conduction angle
5
T_J = 150 °C
0
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
300
Maximum non-repetitive surge current
versus pulse train duration.
250
Initial T_J = 150 °C
No voltage reapplied
Rated V_RRM reapplied
200
150
100
50
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Aug-11
3
Document Number: 94341
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