20ETS08PBF Datasheet, PDF (2/9 Pages) Vishay Siliconix – High Voltage Input Rectifier Diode, 20 A

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VS-20ETS..PbF, VS-20ATS..PbF
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
I²ïƒ–t
TEST CONDITIONS
T_C = 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V_RRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
UNITS
A
A²s
A²ïƒ–s
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
V_FM
r_t
V_F(TO)
Maximum reverse leakage current
I_RM
TEST CONDITIONS
20 A, T_J = 25 °C
T_J = 150 °C
T_J = 25 °C
T_J = 150 °C
V_R = Rated V_RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
T_J, T_Stg
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
R_thJC
R_thCS
DC operation
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum
maximum
Marking device
Case style TO-220AC
Case style TO-220AB
VALUES
- 40 to 150
UNITS
°C
1.3
°C/W
0.5
2
g
0.07
oz.
6 (5)
12 (10)
kgf · cm
(lbf · in)
20ETS08
20ETS12
20ATS08
20ATS12
Revision: 18-Aug-11
2
Document Number: 94341
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