20ETS08PBF Datasheet, PDF (1/9 Pages) Vishay Siliconix – High Voltage Input Rectifier Diode, 20 A

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VS-20ETS..PbF, VS-20ATS..PbF
Vishay Semiconductors
High Voltage Input Rectifier Diode, 20 A
TO-220AC
TO-220AB
FEATURES
• Designed and qualified according to
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
Base
cathode
2
Cathode to
base
2
APPLICATIONS
• Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in
identical package outlines
1
3
Cathode Anode
VS-20ETS..PbF
1
Anode
3
Anode
VS-20ATS..PbF
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_FSM
T_J max.
Diode variation
TO-220AC, TO-220AB
20 A
800 V to 1200 V
1.1 V
300 A
150 °C
Single die, common anode
DESCRIPTION
The VS-20ETS..PbF, VS-20ATS..PbF rectifier high voltage
series has been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation technology
used has reliable operation up to 150 °C junction
temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter T_A = 55 °C, T_J = 125 °C
common heatsink of 1 °C/W
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
Sinusoidal waveform
V_F
10 A, T_J = 25 °C
T_J
VALUES
20
800/1200
300
1.0
- 40 to 150
VOLTAGE RATINGS
PART NUMBER
VS-20ETS08PbF,
VS-20ATS08PbF
VS-20ETS12PbF,
VS-20ATS12PbF
V_RRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V_RSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
UNITS
A
V
A
V
°C
I_RRM
AT 150 °C
mA
1
Revision: 18-Aug-11
1
Document Number: 94341
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000