VS-HFA25TB60SPBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA25TB60SPbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
I_F = 25 A
Maximum forward voltage
V_FM
I_F = 50 A
See fig. 1
I_F = 25 A, T_J = 125 °C
Maximum reverse 
leakage current
V_R = V_R rated
I_RM
See fig. 2
T_J = 125 °C, V_R = 0.8 x V_R rated
Junction capacitance
C_T
V_R = 200 V
See fig. 3
Series inductance
L_S
Measured lead to lead 5 mm from package body
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.3
1.5
600
55
8.0
MAX.
-
1.7
2.0
1.7
20
2000
100
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall recovery
current during t_b
See fig. 8
t_rr
t_rr1
t_rr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
dI_(rec)M/dt1
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 25 A
dI_F/dt = 200 A/μs
V_R = 200 V
T_J = 25 °C
dI_(rec)M/dt2 T_J = 125 °C
-
23
-
50
-
105
-
4.5
-
8.0
-
112
-
420
-
250
-
160
MAX.
-
75
160
10
15
375
1200
-
-
UNITS
ns
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance, 
junction to case
Thermal resistance, 
junction to ambient
T_lead
R_thJC
R_thJA
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Weight
Marking device
Case style TO-263AB (D²PAK)
MIN.
-
-
-
-
-
TYP.
-
-
MAX.
300
1.0
-
80
2.0
-
0.07
-
HFA25TB60S
UNITS
°C
K/W
g
oz.
Revision: 26-Feb-16
2
Document Number: 94066
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