VS-HFA25TB60SPBF Datasheet, PDF (1/8 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA25TB60SPbF
Vishay Semiconductors
HEXFRED^®
Ultrafast Soft Recovery Diode, 25 A
TO-263AB (D²PAK)
Base
cathode
2
1
N/C
3
Anode
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
TO-263AB (D²PAK)
25 A
600 V
1.3 V
23 ns
150 °C
Single die
DESCRIPTION
VS-HFA25TB60S is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED^® product line features
extremely low values of peak recovery current (I_RRM) and
does not exhibit any tendency to “snap-off” during the
t_b portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60S is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
VALUES
600
25
225
100
125
50
-55 to +150
UNITS
V
A
W
°C
Revision: 26-Feb-16
1
Document Number: 94066
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000