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| SI9913_04 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Half-Bridge MOSFET Driver for Switching Power Supplies | |||
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Si9913
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Low Side Driver Supply Voltage
Input Voltage on IN
Synchronous Pin Voltage
Bootstrap Voltage
High Side Driver (Bootstrap) Supply Voltage
Operating Junction Temperature Range
Storage Temperature Range
Power Dissipation (Note a and b)
Thermal Impedance
Lead Temperature (soldering 10 Sec)
VDD
VIN
VSYN
VBOOT
VBOOT â VS
TJ
Tstg
PD
qJA
7.0
â0.3 to VDD +0.3
â0.3 to VDD +0.3
35.0
7.0
â40 to 125
â40 to 150
830
125
300
Unit
V
_C
mW
°C/W
°C
Notes
a. Device mounted with all leads soldered to P.C. Board
b. Derate 8.3 W/_C above 25_C
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Bootstrap Voltage (High-Side Drain Voltage)
Logic Supply
Bootstrap Capacitor
Ambient Temperature
Symbol
VBOOT
VDD
CBOOT
TA
Limit
4.5 to 30
4.5 to 5.5
100 n to 1 m
â40 to 85
Unit
V
F
_C
SPECIFICATIONS
Parameter
Power Supplies
VDD Supply
IDD Supply
IDD Supply
IDD Supply
IDD Supply
IDD Supply
IDD Supply
Boot Strap Current
Reference Voltage
Break-Before-Make Reference Voltage
Logic Inputs (SYN, IN)
Input High
Input Low
Undervoltage Lockout
VDD Undervoltage
VDD Undervoltage Hysteresis
www.vishay.com
2
Symbol
VDD
IDD1 (en)
IDD2(en)
IDD3(dis)
IDD4(en)
IDD5(dis)
IDD(en)
IDD(dis)
IBOOT
VBBM
VIH
VIL
VUVL
VHYST
Test Conditions Unless Specified
VBOOT = 4.5 to 30 V, VDD = 4.5 to 5.5 V
TA = â40 to 85_C
SYN = H, IN = H, VS = 0 V
SYN = H, IN = L, VS = 0 V
SYN = L, IN = X, VS = V
SYN = H, IN = X, VS = 25 V, VBOOT = 30 V
SYN = L, IN = X, VS = 25 V, VBOOT = 30 V
FIN = 300 kHz, SYN = High, Driving Si4412DY
FIN = 300 kHz, SYN = Low, Driving Si4412DY
VBOOT = 30 V, VS = 25 V, VOUTH = H
VDD Rising
Mina
Limits
Typb
Maxa
Unit
4.5
5.5
1000
500
mA
500
200
200
9
5
mA
0.9
3
1.1
3
V
0.7 VDD
â0.3
VDD + 0.3
0.3 VDD
V
3.7
4.3
V
0.4
Document Number: 71343
S-40133âRev. B, 16-Feb-04
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