English
Language : 

DG3157A Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low Voltage, 300-MHz - 3 dB Bandwidth, SPDT Analog Switch with Power Down Protection (2:1 Multiplexer/Demultiplexer Bus Switch)
DG3157A, DG3157B
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
S, A, Ba
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Packages)b
D-Suffix
miniQFN-6c
Limit
Unit
- 0.3 to + 6
V
- 0.3 to (V+ + 0.3)
± 50
mA
± 200
- 65 to 150
°C
160
mW
Notes:
a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.0 mW/°C above 70 °C.
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3.0 V, VSL = 0.5 V, VSH = 2.0 Ve
Temp.a
Limits
- 40 °C to 85 °C
Min.b Typ.c Max.b
Unit
DC Characteristics
V+ = 1.65 to 1.95 V
1.2
V+ = 2.0 to 2.6 V
1.4
High Level Input Voltage
VSH
V+ = 2.7 to 3.6 V
2.0
V+ = 4.5 to 5.5 V
V+ = 1.65 to 1.95 V
2.4
Full
V
0.3
V+ = 2.0 to 2.6 V
0.4
Low Level Input Voltage
VSL
V+ = 2.7 to 3.6 V
0.5
V+ = 4.5 to 5.5 V
0.8
VBN = 0 V, IA = 30 mA
4.8
7
V+ = 4.5 V
VBN = 2.4 V, IA = - 30 mA
5.7
12
VBN = 4.5 V, IA = - 30 mA
10.3
15
On-Resistance
V+ = 3.0 V
VBN = 0 V, IA = 24 mA
RON
VBN = 3.0 V, IA = - 24 mA Full
5.9
9
13.7
20
V+ = 2.3 V
VBN = 0 V, IA = 8 mA
VBN = 2.3 V, IA = - 8 mA
7
12
16.2
30
V+ = 1.65 V
VBN = 0 V, IA = 4 mA
VBN = 1.65 V, IA = - 4 mA
9.2
20
24
50
Ω
V+ = 4.5 V, IA = - 30 mA
8
On-Resistance Flatness
RFLAT
0 < VBN < V+
V+ = 3.0 V, IA = - 24 mA
V+ = 2.3 V, IA = - 8 mA
13
24
V+ = 1.65 V, IA = - 4 mA Room
89
V+ = 4.5 V, VBN = 3.15 V, IA = - 30 mA
0.8
On-Resistance Matching
Between Channels
ΔRON
V+ = 3.0 V, VBN = 2.1 V, IA = - 24 mA
V+ = 2.3 V, VBN = 1.6 V, IA = - 8 mA
0.1
0.2
V+ = 1.65 V, VBN = 1.15 V, IA = - 4 mA
0.9
Input Leakage Current
Off Stage Switch Leakage
IS
IBN(off)
V+ = 5.5 V,
VA = 5.5 V,
VS = 0.8 V, 2.4 V
DG3157B
DG3157A
V+ = 5.5 V, VA/VB = 0 V/5.5 V
- 1.0
1.0
Full
- 1.0
2.5
7.0
Room
Full
- 0.1
- 1.0
0.1
µA
1.0
On State Switch Leakage IBN(on)
V+ = 5.5 V, VA/VB = 0 V/5.5 V
Room
Full
- 0.1
- 1.0
0.1
1.0
www.vishay.com
2
Document Number: 68628
S-81944-Rev. C, 25-Aug-08