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V23990-P587-X2X-D2-14 Datasheet, PDF (9/23 Pages) Vincotech – Industrial drives Embedded drives
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
3200
dI0/dt
dIrec/dt
2400
1600
800
0
0
At
Tj =
VCE =
VGE =
Rgon =
25/125
300
±15
8
50
°C
V
V
Ω
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output Inverter
V23990-P587-*2*-PM
Output inverter FWD
100
I C (A) 150
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
6000
5000
4000
3000
2000
1000
0
0
5
10
15
20
At
Tj =
VR =
IF =
VGE =
25/125 °C
300
V
75
A
±15
V
Output inverter FWD
dI0/dt
dIrec/dt
25
30 R gon ( Ω ) 35
Output inverter IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
Output inverter FWD
100
100
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
1,06
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
Phase change material
RthJH = 0,89
K/W
IGBT thermal model values
Thermal grease
Phase change material
R (C/W) Tau (s)
R (C/W) Tau (s)
0,08
3,9E+00
3,26
3,9E+00
0,31
5,3E-01
0,45
5,3E-01
0,57
1,4E-01
0,11
1,4E-01
0,16
1,5E-02
0,01
1,5E-02
0,04
9,3E-04
0,00
9,3E-04
10-1
10-2
10-5
At
D=
RthJH =
10-4
tp / T
1,51
10-3
K/W
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100
t p (s) 10110
Phase change material
RthJH = 1,27
K/W
FWD thermal model values
Thermal grease
Phase change material
R (C/W) Tau (s)
R (C/W) Tau (s)
0,09
3,9E+00
3,32
3,9E+00
0,41
5,0E-01
0,43
5,0E-01
0,60
1,2E-01
0,11
1,2E-01
0,29
1,9E-02
0,02
1,9E-02
0,06
2,6E-03
0,00
2,6E-03
0,07
2,9E-04
0,00
2,9E-04
copyright Vincotech
9
Revision: 2