V23990-P587-X2X-D2-14 Datasheet, PDF (11/23 Pages) Vincotech – Industrial drives Embedded drives

Figure 25
Safe operating area as a function
of collector-emitter voltage
I_C = f(V_CE)
10³
10²
10¹
10⁰
Output Inverter
V23990-P587-*2*-PM
Output inverter IGBT
Figure 26
Gate voltage vs Gate charge
V_GE = f(Q_GE)
16
100uS
12
1mS
10mS
8
100mS
DC
4
Output inverter IGBT
120V
480V
10^-1
10⁰
At
D=
T_h =
V_GE =
T_j =
10¹
single pulse
80
ºC
±15
V
T_jmax
ºC
10²
V CE (V)
10³
Figure 27
Short circuit withstand time as a function of
gate-emitter voltage
t_sc = f(V_GE)
13
Output inverter IGBT
0
0
100
200
300
400
500
Q g (nC)
At
I_C =
75
A
Figure 28
Output inverter IGBT
Typical short circuit collector current as a function of
gate-emitter voltage
V_GE = f(Q_GE)
1300
11
1100
9
900
7
700
5
500
3
300
10
11
12
13
14
15
V GE (V)
12
14
16
At
V_CE =
600
V
T_j ≤
150
ºC
At
V_CE ≤
600
V
T_j =
150
ºC
18
20
V GE (V)
copyright Vincotech
11
Revision: 2