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V23990-P587-X2X-D2-14 Datasheet, PDF (4/23 Pages) Vincotech – Industrial drives Embedded drives
V23990-P587-*2*-PM
Parameter
Brake Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
Brake Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
Symbol
Characteristic Values
Conditions
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
IC [A] or
IF [A] or
ID [A]
Tj
Value
Min
Typ
Max
Unit
VGE(th) VCE=VGE
0,0008
Tj=25°C
Tj=125°C
5
5,8
6,5
V
VCE(sat)
15
50
Tj=25°C
1,05
1,50
1,85
Tj=125°C
1,71
V
ICES
0
600
Tj=25°C
Tj=125°C
0,04
1
mA
IGES
20
0
Tj=25°C
Tj=125°C
600
nA
Rgint
-
Ω
td(on)
tr
td(off) Rgoff=16 Ω
±15
300
50
tf
Rgon=16 Ω
Eon
Eoff
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
162
164
9
11
351
393
83
108
0,161
0,223
0,478
0,560
ns
mWs
Cies
3140
Coss f=1MHz
0
25
Tj=25°C
200
pF
Crss
93
QGate
Tj=25°C
310
nC
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
1,497
K/W
RthJH
Preapplied
Phase change
material
1,27
K/W
VF
Ir
IRRM
trr
Rgon=16 Ω
Qrr Rgon=16 Ω
15
di(rec)max
/dt
Erec
RthJH
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Preapplied
Phase change
material
20
600
300
20
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,25
1,45
1,95
1,30
V
27
µA
17
20
22
145
0,46
0,46
2451
1404
0,084
0,171
A
ns
µC
A/µs
mWs
3,41
K/W
2,97
K/W
R
∆R/R
P
B(25/50) Tol. ±3%
B(25/100)
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
Ω
-5
5
%
200
mW
2
mW/K
3950
K
3996
K
B
copyright Vincotech
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Revision: 2