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| V23990-K420-A40-PM Datasheet, PDF (9/18 Pages) Vincotech – Solderless interconnection | |||
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V23990-K420-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
5000
dI0/dt
4000
dIrec/dt
D1,D2,D3,D4,D5,D6,D7 FWD
3000
dIrec/dtLow T
dIo/dtLow T
2000
1000
di0/dtHigh T
dIrec/dtHigh T
0
0
50
100
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
4
â¦
150
I C (A)
200
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
5000
4000
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
Tj = 25°C
3000
2000
Tj = Tjmax - 25°C
1000
0
0
4
8
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
100
A
±15
V
dIrec/dtHigh T
12
16
R gon ( ⦠) 20
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
D1,D2,D3,D4,D5,D6,D7 FWD
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,48
K/W
IGBT thermal model values
R (C/W)
0,08
0,21
0,13
0,05
0,00
Tau (s)
1,1E+00
1,8E-01
6,5E-02
1,0E-02
1,2E-03
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,66
K/W
FWD thermal model values
R (C/W)
0,04
0,12
0,28
0,13
0,09
Tau (s)
2,7E+00
5,0E-01
1,4E-01
3,9E-02
9,9E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s) 10110
copyright Vincotech
9
Revision: 2.1
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