V23990-K420-A40-PM Datasheet, PDF (6/18 Pages) Vincotech – Solderless interconnection

V23990-K420-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
30
25
20
15
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
30
25
20
15
10
10
E_{off Low T}
5
5
0
0
50
100
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/150 °C
600
V
±15
V
4
Ω
4
Ω
150
I C (A)
200
0
0
4
8
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/150 °C
600
V
±15
V
100
A
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
12
16 R G ( Ω ) 20
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
7,5
T1,T2,T3,T4,T5,T6,T7 IGBT
E_rec
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
7,5
T1,T2,T3,T4,T5,T6,T7 IGBT
6
T_j = T_jmax -25°C
4,5
6
T_j = T_jmax -25°C
E_rec
4,5
E_rec
3
3
T_j = 25°C
1,5
T_j = 25°C
1,5
E_rec
0
0
50
100
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
4
Ω
0
150
I C (A)
200
0
4
8
12
16
R G ( Ω ) 20
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
100
A
copyright Vincotech
6
Revision: 2.1