V23990-K420-A40-PM Datasheet, PDF (8/18 Pages) Vincotech – Solderless interconnection

V23990-K420-A40-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
25
Q_rr
20
T_j = T_jmax -25°C
15
10
Q_rr
T_j = 25°C
5
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
25
20
T_j = T_jmax -25°C
15
Q_rr
10
T_j = 25°C
Q_rr
5
0
At ⁰
50
100
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
4
Ω
0
150
I C (A)
200
0
4
8
12
16 R g on ( Ω) 20
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
100
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
100
D1,D2,D3,D4,D5,D6,D7 FWD
T_j = T_jmax -25°C
80
60
T_j = 25°C
I_RRM
I_RRM
40
20
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
150
D1,D2,D3,D4,D5,D6,D7 FWD
120
90
60
T_j = 25°C
30
T_j = T_jmax - 25°C
I_RRM
I_RRM
0
0
50
100
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
4
Ω
0
150
I C (A)
200
0
4
8
12
16
R gon ( Ω ) 20
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
100
A
±15
V
copyright Vincotech
8
Revision: 2.1