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| 10-FZ06NBA100SG10-M305L58 Datasheet, PDF (9/18 Pages) Vincotech – symmetric booster | |||
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10-FZ06NBA100SG10-M305L58
Figure 21
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
12000
dI0/dt
dIrec/dt
10000
8000
6000
4000
2000
0
0
30
60
90
At
Tj =
VCE =
VGE =
Rgon =
25/125 °C
350
V
15
V
4
â¦
Figure 23
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
BOOST
BOOST FWD
120
I C (A) 150
BOOST IGBT
Figure 22
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
18000
15000
BOOST FWD
dI0/dt
dIrec/dt
12000
9000
6000
3000
0
0
4
8
12
At
Tj =
VR =
IF =
VGE =
25/125 °C
350
V
71
A
15
V
Figure 24
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
16 R Gon ( â¦)
20
BOOST FWD
10-1
10-2
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,54
K/W
IGBT thermal model values
R (C/W)
9,03E-02
1,74E-01
1,93E-01
5,65E-02
2,20E-02
Tau (s)
1,44E+00
1,82E-01
5,93E-02
9,38E-03
1,07E-03
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-1
100 t p (s)
1011 0
10-5
10-4
10-3
10-2
At
D=
RthJH =
tp / T
0,93
K/W
FWD thermal model values
R (C/W)
6,93E-02
1,64E-01
5,02E-01
8,20E-02
6,58E-02
4,43E-02
Tau (s)
3,04E+00
4,75E-01
9,73E-02
2,48E-02
4,90E-03
1,04E-03
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-1
100
t p (s)
1011 0
Copyright by Vincotech
9
Revision: 1
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