10-FZ06NBA100SG10-M305L58 Datasheet, PDF (6/18 Pages) Vincotech – symmetric booster

10-FZ06NBA100SG10-M305L58
Figure 9
Typical switching energy losses
as a function of collector current
E = f(I_D)
3
2,5
2
1,5
1
0,5
0
0
30
60
90
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/125 °C
350
V
15
V
4
Ω
4
Ω
Figure 11
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_c)
1
0,8
0,6
0,4
0,2
0
0
30
60
90
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
15
V
R_gon =
4
Ω
R_goff =
4
Ω
BOOST
BOOST IGBT
E_{on High T}
E_{off High T}
E_{on Low T}
E_{off Low T}
120
150
I C (A)
Figure 10
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
3,5
3
2,5
2
BOOST IGBT
E_{on High T}
E_{off Low T}
E_{off High T}
E_{on Low T}
1,5
1
0,5
0
0
2
4
6
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/125 °C
350
V
15
V
71
A
8
10
12
14 _{R G}1₍6_{Ω )} 18
BOOST IGBT
E_{rec High T}
Figure 12
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
0,8
0,6
BOOST IGBT
E_{rec High T}
0,4
E_{rec Low T}
120
150
I C (A)
0,2
0
0
2
4
6
With an inductive load at
T_j =
25/125 °C
V_CE =
350
V
V_GE =
15
V
I_C =
71
A
E_{rec Low T}
8
10
12
14 _{R G (}1_Ω6 ₎
18
Copyright by Vincotech
6
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