10-FZ06NBA100SG10-M305L58 Datasheet, PDF (8/18 Pages) Vincotech – symmetric booster

10-FZ06NBA100SG10-M305L58
Figure 17
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
5
4
3
2
1
0
0
30
60
90
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
4
Ω
Figure 19
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
150
120
90
60
30
0
0
30
60
90
At
T_j =
V_CE =
V_GE =
R_gon =
25/125 °C
350
V
15
V
4
Ω
BOOST
BOOST FWD
Q_{rr High T}
Figure 18
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
4
3
2
Q_{rr Low T}
1
0
120
I C (A) ¹⁵⁰
0
4
8
12
At
Tj =
VR =
IF =
V_GE =
25/125 °C
350
V
71
A
15
V
BOOST FWD
I_{RRM High T}
Figure 20
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
150
120
90
I_{RRM Low T}
60
30
120
150
I C (A)
0
0
4
8
12
At
T_j =
V_R =
I_F =
V_GE =
25/125 °C
350
V
71
A
15
V
BOOST FWD
Q_{rr High T}
Q_{rr Low T}
16
20
R Gon (Ω)
BOOST FWD
I_{RRM High T}
I_{RRM Low T}
16
20
R Gon (Ω)
Copyright by Vincotech
8
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