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| V23990-K429-A60-PM Datasheet, PDF (8/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology | |||
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V23990-K429-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
6000
4500
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
12000
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
9000
3000
6000
1500
3000
0
0
25
50
75
100
125 I C (A)
150
0
0
8
16
24
32
40
R gon ( ⦠)
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
8
â¦
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
75
A
±15
V
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
D1,D2,D3,D4,D5,D6,D7 FWD
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
0,63
K/W
IGBT thermal model values
Thermal grease
R (C/W) Tau (s)
0,05
3,0E+00
0,19
3,6E-01
0,30
7,9E-02
0,06
9,8E-03
0,03
5,2E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100 t p (s)
1012
10-1
10-2
10-5
10-4
10-3
10-2
10-1
At
D=
RthJH =
tp / T
0,75
K/W
FWD thermal model values
Thermal grease
R (C/W) Tau (s)
0,06
2,8E+00
0,27
2,8E-01
0,31
6,9E-02
0,08
8,5E-03
0,04
5,3E-04
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
100
t p (s) 1012
Copyright by Vincotech
8
Revision: 1.1
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