V23990-K429-A60-PM Datasheet, PDF (4/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology

V23990-K429-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I_C = f(V_CE)
210
180
150
120
90
60
30
0
0
At
t_p =
T_j =
V_GE from
1
2
250
µs
25
°C
7 V to 17 V in steps of 1 V
T1,T2,T3,T4,T5,T6,T7 IGBT
3
4
V CE (V) 5
Figure 2
Typical output characteristics
I_C = f(V_CE)
210
180
150
120
90
60
30
0
0
At
t_p =
T_j =
V_GE from
1
2
250
µs
150
°C
7 V to 17 V in steps of 1 V
T1,T2,T3,T4,T5,T6,T7 IGBT
3
4
V CE (V) 5
Figure 3
Typical transfer characteristics
I_C = f(V_GE)
75
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I_F = f(V_F)
150
125
60
100
45
75
30
50
15
25
0
0
2
4
6
8
10
V GE (V) ¹²
0
0
0,8
1,6
At
T_j =
t_p =
V_CE =
25/150 ^°C
250
µs
10
V
At
T_j =
25/150 ^°C
t_p =
250
µs
D1,D2,D3,D4,D5,D6,D7 FWD
2,4
3,2
V F (V) ⁴
Copyright by Vincotech
4
Revision: 1.1