V23990-K429-A60-PM Datasheet, PDF (7/18 Pages) Vincotech – Mitsubishi Generation 6.1 technology

V23990-K429-A60-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
30
25
Q_rr
20
15
10
Q_rr
5
0
0
At
25
50
75
100
125I _C (A)
150
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
8
Ω
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
30
25
20
Q_rr
15
10
5
Q_rr
0
0
8
16
24
32 _{R gon ( Ω)} 40
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
75
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
200
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
200
D1,D2,D3,D4,D5,D6,D7 FWD
160
160
120
120
80
80
I_RRM
I_RRM
40
40
I_RRM
I_RRM
0
0
0
25
50
75
100
125 I _C (A) 150
0
8
16
24
32 R _gon ( Ω )
40
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
8
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
75
A
±15
V
Copyright by Vincotech
7
Revision: 1.1