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| V23990-K428-A40-PM Datasheet, PDF (8/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology | |||
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V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 17
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
5000
dI0/dt
4000
dIrec/dt
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 18
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon)
10000
8000
D1,D2,D3,D4,D5,D6,D7 FWD
dI0/dt
dIrec/dt
3000
6000
2000
4000
1000
2000
0
0
20
40
At
Tj =
VCE =
VGE =
Rgon =
25/150 °C
600
V
±15
V
8
â¦
Figure 19
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
60
80
I C (A) 100
0
0
8
16
24
32 R gon ( ⦠) 40
At
Tj =
VR =
IF =
VGE =
25/150 °C
600
V
50
A
±15
V
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 20
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
100
D1,D2,D3,D4,D5,D6,D7 FWD
10-1
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
10-2
10-2
10-5
10-4
10-3
10-2
10-1
100 t p (s)
10110
10-5
10-4
10-3
10-2
10-1
100
t p (s) 10110
At
D=
RthJH =
tp / T
0,71
K/W
At
D=
RthJH =
tp / T
0,95
K/W
IGBT thermal model values
FWD thermal model values
R (C/W)
0,11
0,36
0,16
0,06
0,02
Tau (s)
7,7E-01
1,3E-01
4,6E-02
8,2E-03
1,1E-03
R (C/W)
0,06
0,21
0,44
0,17
0,07
Tau (s)
2,5E+00
3,5E-01
7,8E-02
1,7E-02
3,6E-03
copyright Vincotech
8
Revision: 4.1
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