V23990-K428-A40-PM Datasheet, PDF (7/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 13
Typical reverse recovery charge as a
function of collector current
Q_rr = f(I_C)
D1,D2,D3,D4,D5,D6,D7 FWD
15
Figure 14
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Q_rr = f(R_gon)
D1,D2,D3,D4,D5,D6,D7 FWD
12
10
12
Q_rr
Q_rr
8
9
6
6
Q_rr
4
Q_rr
3
2
0
0
At ⁰
20
40
60
80 I C (A) 100
0
8
16
24
32
R g on ( Ω) 40
At
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
8
Ω
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
50
A
±15
V
Figure 15
Typical reverse recovery current as a
function of collector current
I_RRM = f(I_C)
100
D1,D2,D3,D4,D5,D6,D7 FWD
Figure 16
Typical reverse recovery current as a
function of IGBT turn on gate resistor
I_RRM = f(R_gon)
150
D1,D2,D3,D4,D5,D6,D7 FWD
80
120
I_RRM
60
I_RRM
90
40
60
I_RRM
20
30
I_RRM
0
0
0
20
40
60
80
I C (A) 100
0
8
16
24
32
R gon ( Ω ) 40
At
T_j =
V_CE =
V_GE =
R_gon =
25/150 °C
600
V
±15
V
8
Ω
At
T_j =
V_R =
I_F =
V_GE =
25/150 °C
600
V
50
A
±15
V
copyright Vincotech
7
Revision: 4.1