V23990-K428-A40-PM Datasheet, PDF (5/17 Pages) Vincotech – Trench Fieldstop IGBT4 technology

V23990-K428-A40-PM
T1,T2,T3,T4,T5,T6,T7/D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I_C)
10
8
6
4
2
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{off High T}
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R_G)
10
8
E_{on Low T}
6
E_{off Low T}
4
2
T1,T2,T3,T4,T5,T6,T7 IGBT
E_{on High T}
E_{on Low T}
E_{off High T}
E_{off Low T}
0
0
0
20
40
60
80
I C (A) 100
0
8
16
24
32 R G ( Ω ) 40
With an inductive load at
T_j =
V_CE =
V_GE =
R_gon =
R_goff =
25/150 °C
600
V
±15
V
8
Ω
8
Ω
With an inductive load at
T_j =
V_CE =
V_GE =
I_C =
25/150 °C
600
V
±15
V
50
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E_rec = f(I_C)
5
D1,D2,D3,D4,D5,D6,D7 FWD
E_rec
4
3
E_rec
2
1
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E_rec = f(R_G)
5
D1,D2,D3,D4,D5,D6,D7 FWD
4
E_rec
3
2
E_rec
1
0
0
0
20
40
60
80
I C (A) 100
0
8
16
24
32
R G ( Ω ) 40
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
R_gon =
8
Ω
With an inductive load at
T_j =
25/150 °C
V_CE =
600
V
V_GE =
±15
V
I_C =
50
A
copyright Vincotech
5
Revision: 4.1